Related papers: Self-Organised Fractional Quantisation in a Hole Q…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We study one-dimensional transport in focused-ion-beam written in-plane-gate transistors on III-V heterostructures at moderately low temperatures at zero bias without any external magnetic field applied. In accordance with a recent proposal…
We develop a microscopic formalism to study the fractional quantum Hall plateaus at filling factors $\nu $ away from $1/2\beta$ $\beta$ an integer. The theory is in terms of quasiparticles which carry a charge $e^{\ast}$ equal to…
We give a simple macroscopic phase-space explanation of fractional quantum Hall effect (FQHE), in a fashion reminiscent of the Landau-Ginsburg macroscopic symmetry breaking analyses. This is in contrast to the more complicated microscopic…
Thermoelectric transport coefficients are determined for semiconductor quantum wires with weak thickness fluctuations. Such systems exhibit anomalies in conductance near 1/4 and 3/4 of 2e^2/h on the rising edge to the first conductance…
We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire…
Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an…
Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime…
Fractional conductance is measured by partitioning $\nu = 1$ edge state using gate-tunable fractional quantum Hall (FQH) liquids of filling 1/3 or 2/3 for current injection and detection. We observe two sets of FQH plateaus 1/9, 2/9, 4/9…
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
Evaluation of critical bandstructure and quantum transport parameters in two-dimensional systems is challenging when competition emerges among different energy scales shaping quantum oscillations in a magnetic field. Here we overcome this…
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus…
We have studied quantum wires using the Green's function technique and the density-functional theory, calculating the electronic structure and the conductance. All the numerics are implemented using the finite-element method with a…
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface…
Certain fractional quantum Hall edges have been predicted to undergo quantum phase transitions which reduce the number of edge channels and at the same time bind electrons together. However, detailed studies of experimental signatures of…
When charge transport occurs under conditions like topological protection or ballistic motion, the conductance of low-dimensional systems often exhibits quantized values in units of $e^{2}/h$, where $e$ and $h$ are the elementary charge and…
We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method inside the p-type silicon quantum well (SQW) on the n-type Si…