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We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$…

Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit…

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The…

Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…

Materials Science · Physics 2020-03-28 Daniel K. Park , Sejun Park , Hyejung Jee , Soonchil Lee

Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which…

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

Materials Science · Physics 2012-01-17 Lukas Dreher , Felix Hoehne , Martin Stutzmann , Martin S. Brandt

Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressable transitions. In ZnO, the shallow donor with the largest…

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time (T2) of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms,…

Mesoscale and Nanoscale Physics · Physics 2016-10-03 Hosung Seo , Abram L. Falk , Paul V. Klimov , Kevin C. Miao , Giulia Galli , David D. Awschalom

Wide-bandgap oxides such as ZnO are favorable hosts for spin defect qubits due to their dilute nuclear spin background and potential for ultra-high purity. Yet, a deep-level defect qubit with robust optical and spin properties has not been…

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well…

Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical…

The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent…

Other Condensed Matter · Physics 2015-05-30 D. R. McCamey , C. Boehme , G. W. Morley , J. van Tol

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 S. Das Sarma , Rogerio de Sousa , Xuedong Hu , Belita Koiller

Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the…

Mesoscale and Nanoscale Physics · Physics 2010-05-18 Hendrik Bluhm , Sandra Foletti , Izhar Neder , Mark Rudner , Diana Mahalu , Vladimir Umansky , Amir Yacoby

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…

Mesoscale and Nanoscale Physics · Physics 2016-01-22 A. J. Sigillito , R. M. Jock , A. M. Tyryshkin , J. W. Beeman , E. E. Haller , K. M. Itoh , S. A. Lyon

Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they…

Solid-state spin defects are a promising platform for quantum networks. A key requirement is to combine long ground-state spin-coherence times with a coherent optical transition for spin-photon entanglement. Here, we investigate the spin…

Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in…

Quantum Physics · Physics 2015-06-16 R. Guichard , S. J. Balian , G. Wolfowicz , P. A. Mortemousque , T. S. Monteiro

We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress…

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