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Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…

Mesoscale and Nanoscale Physics · Physics 2018-07-24 Evgeniy Ponomarev , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Helmuth Berger , Alberto F. Morpurgo

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in…

Applied Physics · Physics 2018-02-15 Krishna Murali , Medha Dandu , Sarthak Das , Kausik Majumdar

Van der Waals (vdWs) heterostructures assembled by stacking 2D crystal layers have proven to be a new material platform for high-performance optoelectronic applications such as thin film transistors, photodetectors, and emitters. Here, we…

Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional…

We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential…

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures.…

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…

Mesoscale and Nanoscale Physics · Physics 2014-08-14 Kai Tak Lam , Gyungseon Seol , Jing Guo

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging.…

Strongly Correlated Electrons · Physics 2023-10-13 Allen Jian Yang , Liang Wu , Yanran Liu , Xinyu Zhang , Kun Han , Ying Huang , Shengyao Li , Xian Jun Loh , Qiang Zhu , Rui Su , Ce-Wen Nan , X. Renshaw Wang

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy…

Van der Waals integration enables the creation of electronic and optoelectronic devices with unprecedented performance and novel functionalities beyond the existing material limitations. However, it is typically realized using a physical…

Materials Science · Physics 2025-08-27 Xinyu Sun , Xiang Xu , BinBin Jin , Yihan Lu , Jichuang Shen , Wei Kong , Ding Zhao , Min Qiu

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…

Instrumentation and Detectors · Physics 2017-06-28 Faguang Yan , Lixia Zhao , Amalia Patanè , PingAn Hu , Xia Wei , Wengang Luo , Dong Zhang , Quanshan Lv , Qi Feng , Chao Shen , Kai Chang , Laurence Eaves , Kaiyou Wang

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical…

Mesoscale and Nanoscale Physics · Physics 2014-07-29 Marco M. Furchi , Andreas Pospischil , Florian Libisch , Joachim Burgdörfer , Thomas Mueller

A growing number of two-dimensional superconductors are being discovered in the family of layered van der Waals (vdW) materials. Due to small sample volume, their characterization has been largely limited to electrical transport…

Van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed dimensional p-n heterojunction diodes, such…

Mesoscale and Nanoscale Physics · Physics 2017-03-09 Stephanie Bettis Homan , Vinod K. Sangwan , Itamar Balla , Hadallia Bergeron , Emily A. Weiss , Mark C. Hersam

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin,…

This study presents a comprehensive first-principles investigation of the structural, electronic and optical properties of monolayer \ch{Mo_{1-x}W_xS2} alloys, systematically exploring the full compositional range ($x=0$ to $1$) using…

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…

Mesoscale and Nanoscale Physics · Physics 2019-04-04 Wei Li , Xiang Xiao , Huilong Xu

The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties…

Mesoscale and Nanoscale Physics · Physics 2026-02-06 Ya Feng , Henan Li , Taiki Inoue , Shohei Chiashi , Slava V. Rotkin , Rong Xiang , Shigeo Maruyama