Related papers: Microscopic nanomechanical dissipation in gallium …
Superfluids, such as superfluid $^3\mathrm{He}$ and $^4\mathrm{He}$, exhibit a broad range of quantum phenomena and excitations which are unique to these systems. Nanoscale mechanical resonators are sensitive and versatile force detectors…
The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we…
Implementing microelectromechanical system (MEMS) resonators calls for detailed microscopic understanding of the devices, such as energy dissipation channels, spurious modes, and imperfections from microfabrication. Here, we report the…
Carbon nanotubes and graphene allow fabricating outstanding nanomechanical resonators. They hold promise for various scientific and technological applications, including sensing of mass, force, and charge, as well as the study of quantum…
We perform classical molecular dynamics simulations to examine the intrinsic energy dissipation in single-layer MoS$_{2}$ nanoresonators, where a point of emphasis is to compare its dissipation characteristics with those of single-layer…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Dissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is investigated using molecular dynamics simulation. The dependence of the quality factor Q on temperature and the size of the resonator is calculated from…
We resolve the thermal motion of a high-stress silicon nitride nanobeam at frequencies far below its fundamental flexural resonance (3.4 MHz) using cavity-enhanced optical interferometry. Over two decades, the displacement spectrum is…
We report the observation of discrete displacement of nanomechanical oscillators with gigahertz-range resonance frequencies at millikelvin temperatures. The oscillators are nanomachined single-crystal structures of silicon, designed to…
A patterned Si nanobeam is formed which supports co-localized acoustic and optical resonances that are coupled via radiation pressure. Starting from a bath temperature of T=20K, the 3.68GHz nanomechanical mode is cooled into its quantum…
Engineered micro- and nanomechanical resonators with ultra-low dissipation constitute the ideal systems for applications ranging from high-precision sensing such as magnetic resonance force microscopy, to quantum transduction between…
The shape of a nanomechanical resonator profoundly affects its mechanical properties and determines its suitability for various applications, such as ultra-sensitive mass and force detection. Despite the promise of two-dimensional…
We demonstrate a high-Q ($>5 \times 10^{6}$) swept-frequency membrane mechanical resonator achieving octave resonance tuning via an integrated heater and an unprecedented acceleration noise floor below 1 $\mu$g Hz$^{-1/2}$ for frequencies…
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate…
A number of applications in nanoplasmonics utilize noble metals, gold (Au) and silver (Ag), as the materials of choice. However, these materials suffer from problems of poor thermal and chemical stability accompanied by significant…
Preparing and manipulating quantum states of mechanical resonators is a highly interdisciplinary undertaking that now receives enormous interest for its far-reaching potential in fundamental and applied science. Up to now, only nanoscale…
The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $T\geqslant 0$ using the method of finite-temperature Green's functions and Dyson…
Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their integrable acoustic modes with high quality factors. However,…
Nanostructured high-index dielectrics have shown great promise as low-loss photonic platforms for wavefront control and enhancing optical nonlinearities. However, their potential as optomechanical resonators has remained unexplored. In this…