Related papers: Two-dimensional Mott variable-range hopping transp…
Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on…
Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than…
The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
This article reports the successful synthesis of single crystalline two-dimensional thin flakes of NbSe$_2$. The XRD pattern of the grown crystal ensured its crystallization in a single phase with a hexagonal structure. The EDAX endorsed…
Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…
We study orbital Mott transition in two dimensional pyrochlore lattice, using a two orbital Hubbard model with only inter-orbital electronic hopping. We use a real space Monte Carlo based approach to study the model at finite temperature,…
Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects…
We report recent transport and thermodynamic experiments over a wide range of temperatures for the Mott-like system Ca3Ru2O7 at high magnetic fields, B, up to 30 T. This work reveals a rich and highly anisotropic phase diagram, where…
We report a detailed study of electrical and thermal transport properties in 2H-M$_x$TaS$_2$ (M = Mn, Co) magnets where M atoms are intercalated in the van der Waals gap. The intercalation induces ferromagentism with an easy-plane…
We report evidence for multiband transport and an insulating low-temperature normal state in superconducting K$_{0.50}$Na$_{0.24}$Fe$_{1.52}$Se$_{2}$ with $T_{c}\approx 20$ K. The temperature-dependent upper critical field, $H_{c2}$, is…
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the…
Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…