Related papers: Gate-controlled quantum dots and superconductivity…
Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent…
Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing. However, their current performance is mostly limited by large dot-to-dot variability that leads to uncontrolled qubit…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective…
In superconductor-semiconductor hybrid structures, superconductivity and spin polarization are competing effects because magnetic fields break Cooper pairs. They can be combined using thin films and in-plane magnetic fields, an approach…
We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…
A single hole spin in a semiconductor quantum dot has emerged as a quantum bit that is potentially superior to an electron spin. A key feature of holes is that they have a greatly reduced hyperfine interaction with nuclear spins, which is…
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs…
Hybrid semiconductor-superconductor qubits have recently emerged as a promising alternative to traditional platforms, combining material advantages with device-level tunability. A defining feature is their gate-tunable Josephson coupling,…