Related papers: Telecom wavelength single quantum dots with very s…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
The photoluminescence spectrum of a single quantum dot was recorded as a secondary resonant laser optically dressed either the vacuum-to-exciton or the exciton-to-biexciton transitions. High-resolution polarization-resolved measurements…
The multi-excitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of…
We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at…
Polarization resolved photoluminescence (PL) spectroscopy of individual CdTe/ZnTe quantum dots is investigated in the presence of external in-plane magnetic field. We find that the excitonic fine structure strongly depends on the magnitude…
Semiconductor quantum dots are promising candidates for the generation of nonclassical light. Coupling a quantum dot to a device capable of providing polarization-selective enhancement of optical transitions is highly beneficial for…
Quantum dots (QDs), embedded in supercapacitors (S-C) cells exhibited capacitance amplification that peaked at certain QD concentration. More than 2.5 peak amplification was demonstrated with cyclic voltammetry (C-V) at a scan rate of 0.1…
When placed near a thin metallic film, excitons in a quantum dot (QD) decay into surface plasmon polaritons (SPPs), guided modes of light confined at the interface of the metal/dielectric. It was reported that the interaction of SPPs with…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are…
Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range.…
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific…
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled InGaAs quantum dots with nearly degenerate energy levels. As the interdot distance decreases, a number of changes take place in the emission…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…
We demonstrate that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlAs bottom distributed Bragg reflector (DBR) and native…
We report on high-resolution photoluminescence (PL) spectroscopy of spatial structure of InAs/AlGaAs quantum dots (QDs) by using a near-field scanning optical microscope (NSOM). The double-peaked distribution of PL spectra is clearly…
A theoretical investigation is presented of the statistics of excitons in quantum dots (QDs) of different sizes. A formalism is developed to build the exciton creation operator in a dot from the single exciton wavefunction and it is shown…