Related papers: Hole Mobility Model for Si Double-Gate Junctionles…

We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in…

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…

Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only…

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…

In the framework of the three-band model for CuO_2 plane in high-temperature superconductors the spectrum of the spin-polaron hole exitation is investigated. The problem is treated taking into account the coupling of a local polaron with…

The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into…

We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on…

Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we…

In this paper, we investigate the transport coefficients of a strongly coupled plasma in the context of holographic QCD models based on Einstein-dilaton gravity that are compatible with linear confinement at zero temperature. At finite…

The quantum description of a particle moving in a deformed potential is investigated. A pseudostate (PS) basis is used to represent the states of the composite system. This PS basis is obtained by diagonalizing the system Hamiltonian in a…

We describe the dynamics of a thin spherically symmetric gravitating shell in the Reissner-Nordstrom metric of the electrically charged black hole. The energy-momentum tensor of electrically neutral shell is modelled by the perfect fluid…

Electronic transport through a triple quantum dot system, with only a single dot coupled directly to external leads, is considered theoretically. The model includes Coulomb correlations in the central dot, while such correlations in the two…

Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…

In this paper we continue the program, initiated in Ref. hep-th/0112246, to investigate an integrable noncommutative version of the sine-Gordon model. We discuss the origin of the extra constraint which the field function has to satisfy in…

We present a semianalytical theory for exciton transport in organic molecular crystals interacting strongly with a single cavity mode. Based on the Holstein-Tavis-Cummings model and the Kubo formula, we derive an exciton mobility expression…

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

We report data of the O2- ion mobility in neon gas over broad density and temperature ranges along with its theoretical description in terms of the thermodynamic, free volume model that has successfully been adopted for the interpretation…

Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with…

We study mesoscopic resonant tunneling as well as multichannel Kondo problems by mapping them to a first-quantized quantum mechanical model of a particle moving in a multi-dimensional periodic potential with Ohmic dissipation. From a…

We present a new semi-empirical model for calculating electron transport in atomic-scale devices. The model is an extension of the Extended H\"uckel method with a self-consistent Hartree potential. This potential models the effect of an…