Related papers: Noncommutative quantum Hall effect in graphene
Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
In this article we briefly review recent experimental and theoretical work on quantum Hall effect in graphene, and argue that some of the quantum Hall states exhibit spontaneous symmetry breaking that is driven by electron-electron…
We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…
We present a supersymmetric description of the quantum Hall effect (QHE) in graphene. The noninteracting system is supersymmetric separately at the so-called K and K' points of the Brillouin zone corners. Its essential consequence is that…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arc length of the scrolls in combination with their compact transverse size results in formation of…
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
The fractional quantum Hall effect is a very particular manifestation of electronic correlations in two-dimensional systems in a strong perpendicular magnetic field. It arises as a consequence of a strong Coulomb repulsion between electrons…
A recent method of constructing quantum mechanics in noncommutative coordinates, alternative to implying noncommutativity by means of star product is discussed. Within this approach we study Hall effect as well as quantum phases in…
We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling…
We develop a long wavelength approximation in order to describe the low-energy states of carbon nanotubes in a transverse magnetic field. We show that, in the limit where the square of the magnetic length $l = \sqrt{\hbar c /e B}$ is much…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…
We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in…
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…
We study nonlinear optical response of graphene in the quantum Hall regime to an intense laser pulse. In particular, we consider harmonic generation process. We demonstrate that the generalized magneto-optical conductivity of graphene on…
Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…