Related papers: Quantum oscillation in carrier transport in two-di…
We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon…
We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…
Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal…
We theoretically investigate the transport properties of cold bosonic atoms in a quasi one-dimensional triple-well potential that consists of two large outer wells, which act as microscopic source and drain reservoirs, and a small inner…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…
Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…
We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the…
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a…
A long skinny gate across a fractional quantum Hall fluid at filling $\nu=1/m$ with odd integer $m$, creates a novel one-dimensional (1d) system which is isomorphic to a disordered 1d electron gas with {\it attractive} interactions. By…
We study a system of two quantum dots, each with several discrete levels, which are coherently coupled to a microwave oscillator. They are attached to electronic leads and coupled to a phonon bath, both leading to inelastic processes. For a…
In this paper we show an approach to electron transport in double barrier structures which unifies the well known sequential and resonant tunneling models in the widest range of transport regimes, from completely coherent to completely…
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers…
Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative…
Quantum mechanics can strongly influence the noise properties of mesoscopic devices. To probe this effect we have measured the current fluctuations at high-frequency (5-90 GHz) using a superconductor-insulator-superconductor tunnel junction…