Related papers: Influence of image forces on the interlayer exchan…
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel…
Udalov and Beloborodov in the recent papers [Phys. Rev. B 95, 134106 (2017); Phys. Rev. B 96, 125425 (2017)] report the strong influence of image forces on the conductance of ferroelectric tunnel junctions. In particular, the authors state…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…
This work analyzes the behavior of the interface between a ferromagnetic material and an alter-magnet. We use a well-established line of arguments based on electronic mean-field calculations to show that new surface phenomena that lead to…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The…
The effect of an exchange field on electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer…
We study the magnetization dynamics in ferromagnet$\mid$insulator$\mid$ferromagnet and ferromagnet$\mid$insulator$\mid$normal metal ultra-small tunnel junctions, and the associated voltage drop in the presence of an electromagnetic…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
We study the effect of dielectric inhomogeneities on the interaction between two planparallel charged surfaces with oppositely charged mobile charges in between. The dielectric constant between the surfaces is assumed to be different from…
Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly…
We have measured in a copper wire the energy exchange rate between quasiparticles as a function of the applied magnetic field. We find that the effective electron-electron interaction is strongly modified by the magnetic field, suggesting…
We discuss a mesoscopic mechanism of exchange interaction in ferromagnet-normal metal-ferromagnet multilayers. We show that in the case when the metal's thickness is larger than the electron mean free path, the relative orientation of…
We investigate the interplay between magnetic and structural dynamics in ferromagnetic atomic point contacts. In particular, we look at the effect of the atomic relaxation on the energy barrier for magnetic domain wall migration and,…
A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
The role of graphene in mediating the exchange interaction is theoretically investigated when it is placed between two ferromagnetic dielectric materials. The calculation based on a tight-binding model illustrates that the magnetic…