Related papers: Split-gate device for indirect excitons
Superposition states of circular currents of exciton-polaritons mimic the superconducting flux qubits. The phase of a polariton fluid must change by an integer number of $2\pi$, when going around the ring. If one introduces a ${\pi}$-phase…
We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the…
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…
We show that with a system of electrically-gated wide quantum wells embedded inside a simple dielectric waveguide structure, it is possible to excite, control, and observe waveguided exciton polaritons that carry an electric dipole moment.…
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
A simple but novel driver system has been developed to operate the wire gating grid of a Time Projection Chamber (TPC). This system connects the wires of the gating grid to its driver via low impedance transmission lines. When the gating…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
We propose a pulsed dynamical decoupling protocol as the generator of tunable, fast, and robust quantum phase gates between two microwave-driven trapped ion hyperfine qubits. The protocol consists of sequences of $\pi$-pulses acting on ions…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
Exciton pulses transport excitation and entanglement adiabatically through Rydberg aggregates, assemblies of highly excited light atoms, which are set into directed motion by resonant dipole-dipole interaction. Here, we demonstrate the…
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that…
We describe an interaction mechanism between electron spins in a vertically-stacked double quantum dot that can be used for controlled two-qubit operations. This interaction is mediated by excitons confined within, and delocalized over, the…
Two phase flows that include phase transition, especially phase creation, with a sharp interface remain a challenging task for numerics. We consider the isothermal Euler equations with phase transition between a liquid and a vapor phase.…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
This work presents an original concept directed to implement an unconventional methodology where a device is produced by integrating a solid-state circuitry concept and an electrochemistry cell. In our experimental system an organic…
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena…
We study spatially indirect excitons confined in a 10 $\mu$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with…
Dipolar (or spatially indirect) excitons (IXs) in semiconductor double quantum well (DQW) subjected to an electric field are neutral species with a dipole moment oriented perpendicular to the DQW plane. Here, we theoretically study…
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that…
It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within…