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Related papers: Intercalation of hydrogen in the SiC/epitaxial gra…

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Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…

The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…

Materials Science · Physics 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial…

Materials Science · Physics 2009-11-11 J. Hass , C. A. Jeffrey , R. Feng , T. Li , X. Li , Z. Song , C. Berger , W. A. de Heer , P. N. First , E. H. Conrad

Although not an intrinsic superconductor, it has been long--known that, when intercalated with certain dopants, graphite is capable of exhibiting superconductivity. Of the family of graphite--based materials which are known to superconduct,…

Superconductivity · Physics 2016-08-16 Gabor Csányi , P. B. Littlewood , A. H. Nevidomskyy , Chris J. Pickard , B. D. Simons

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast…

We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal…

Materials Science · Physics 2011-08-15 J. B. Hannon , M. Copel , R. M. Tromp

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron…

The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene…

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we…

Motivated by the recent discovery of superconductivity in Ca- and Yb-intercalated graphite (CaC$_{6}$ and YbC$_{6}$) and from the ongoing debate on the nature and role of the interlayer state in this class of compounds, in this work we…

Superconductivity · Physics 2016-08-14 Lilia Boeri , Giovanni B. Bachelet , Matteo Giantomassi , Ole K. Andersen

Hydrogenation of graphene on the \alpha-quartz (0001) SiO_2 substrate is studied, considering different surface terminations in order to take into account the amorphic nature of the material. Our ab initio calculations show that the…

Mesoscale and Nanoscale Physics · Physics 2012-01-16 P. Havu , M. Ijäs , A. Harju

We report on hydrogen adsorption and desorption on titanium-covered graphene in order to test theoretical proposals to use of graphene functionalized with metal atoms for hydrogen storage. At room temperature titanium islands grow with an…

Chemical Physics · Physics 2013-12-06 Torge Mashoff , Makoto Takamura , Shinichi Tanabe , Hiroki Hibino , Fabio Beltram , Stefan Heun

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance…

Mesoscale and Nanoscale Physics · Physics 2012-07-13 E. Pallecchi , M. Ridene , D. Kazazis , C. Mathieu , F. Schopfer , W. Poirier , D. Mailly , A. Ouerghi

Using graphene as a tuneable optical material enables a series of optical devices such as switchable radar absorbers, variable infrared emissivity surfaces, or visible electrochromic devices. These devices rely on controlling the charge…

Applied Physics · Physics 2023-06-16 Xiaoxiao Yu , Gokhan Bakan , Hengyi Guo , M. Said Ergoktas , Pietro Steiner , Coskun Kocabas

Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer…

A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure.…

Materials Science · Physics 2024-03-05 S. Mondal , U. J. Jayalekshmi , S. Singh , R. K. Mukherjee , A. K Shukla

We report combined experimental and first principles investigations of hydrogen absorption in epitaxial vanadium films on MgO(001) with nominal thicknesses of 10 nm and 50 nm. In - situ optical transmission and four - probe resistance…

Materials Science · Physics 2025-11-11 Qiuxiang Zhang , Yan Zhu , Xiaofang Peng , Weiguang Yang , Yuping Le , Xiao Xin

We have investigated the structure of hydrogen-intercalated quasi-free-standing monolayer graphene (QFMLG) grown on 6H-SiC(0001) by employing total-reflection high-energy positron diffraction (TRHEPD). At least nine diffraction spots of the…

Future laser-interferometric gravitational wave detectors (GWDs) will potentially employ test mass mirrors from crystalline silicon and a laser wavelength of $1550\,\rm{nm}$, which corresponds to a photon energy below the silicon bandgap.…

Electronic decoupling of graphene from metallic and semiconducting substrates via intercalation of different species is one of the widely used approaches in studies of graphene. In the present work the modification of the electronic and…

Materials Science · Physics 2021-12-24 Yong Zhou , Roman Ovcharenko , Beate Paulus , Yuriy Dedkov , Elena Voloshina