Related papers: Magnetic anisotropy by Rashba spin-orbit coupling …
We have investigated electric field (E-field) induced modulation of perpendicular magnetic anisotropy (PMA) in both amorphous and crystalline W/CoFeB/MgO/HfO2 ultra-thin films. We find that in the amorphous state, the E-field effect is…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
A microscopic expression of the residual electrical resistivity tensor is derived in linear response theory for Rashba electrons scattering at a magnetic impurity with cylindrical or non-cylindrical potential. The behavior of the…
Two-dimensional (2D) ferromagnets have been a fascinating subject of research, and magnetic anisotropy (MA) is indispensable for stabilizing the 2D magnetic order. Here, we investigate magnetic anisotropy energy (MAE), magnetic and…
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ),…
The new challenges posed by the need of finding strong rare-earth free magnets demand methods that can predict magnetization and magnetocrystalline anisotropy energy (MAE). We argue that correlated electron effects, which are normally…
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer.…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…
We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…
The magnetization of anisotropic quantum dots in the presence of the Rashba spin-orbit interaction has been studied for three interacting electrons in the dot. We observe unique behaviors of magnetization that are direct reflections of the…
An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related…
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy…
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic…
We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to…
The magnetoresistance of a three-dimensional Rashba material placed on top of a ferromagnetic insulator is theoretically investigated. In addition to the intrinsic Rashba spin-orbit interaction, we also consider extrinsic spin-orbit…
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR)…