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We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
The paper investigates the systematic dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…
Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…
We show that current induced magneto-logic gates like AND, OR and NOT can be designed with the simple architecture involving a single nano spin-valve pillar, as an extension of our recent work on spin-torque-driven magneto-logic universal…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…
For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization…
While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic…
Spin current and spin torque generation through the spin-orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research. The realization of spin-orbit torque (SOT) driven magnetic dynamics and switching…
Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implementations are expected with lower design complexity and…
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…