Related papers: Two-dimensional material based "field-effect CCD"
Focused electron beam induced deposition (FEBID) is a direct-write method for the fabrication of nanostructures whose lateral resolution rivals that of advanced electron lithography but is in addition capable of creating complex…
The unique electrical and optical properties of emerging two-dimensional transition metal dichal-cogenides (TMDs) present compelling advantages over conventional semiconductors, including Si, Ge, and GaAs. Nevertheless, realising the full…
Photo-generated charge in thick, back-illuminated, fully-depleted CCDs is transported by electric fields from the silicon substrate to the collecting well at the front gate of the CCDs. However, electric fields transverse to the surface of…
Although the field of 2D materials has democratized materials science by making high quality samples accessible cheaply, due to the atomically thin nature of these systems, an integration with nanostructures is almost always required to…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…
Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…
Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise…
We present the first direct study of charge density wave (CDW) formation in quasi-2D single layer LaTe_2 using high-resolution angle resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). CDW formation is…
Thick back-illuminated deep-depletion CCDs have superior quantum efficiency over previous generations of thinned and traditional thick CCDs. As a result, they are being used for wide-field imaging cameras in several major projects. We use…
For better explore the relations of inter-modal and inner-modal, even in deep learning fusion framework, the concept of decomposition plays a crucial role. However, the previous decomposition strategies (base \& detail or low-frequency \&…
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…
Two-dimensional (2D) semiconductors provide a unique opportunity for optoelectronics due to their layered atomic structure, electronic and optical properties. To date, a majority of the application-oriented research in this field has been…
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…
Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones…
Contact electrification give rise to charge accumulation at the interface when two materials are brought into contact with each other. The charge accumulation at the interface will diffuse to the interior of the conducting material if the…
We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time…
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…