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Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a…
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
We show that a thin superconductor slab illuminated by a desired pattern of light behaves as a completely controllable two-dimensional photonic media that could be applied in a wide range of optical devices. In this case, the permittivity…
Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron hole…
Photonic topological insulators (PTIs) offer robust platforms for light manipulation, but reconfigurable control of their topological properties without degrading performance remains a major challenge. While phase-change materials (PCMs)…
We present temperature-dependent infrared spectroscopic studies of CaMnSb2, a proposed threedimensional topological material. The low plasma edge in the reflectivity spectrum and small Drude component in the optical conductivity indicate a…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need…
We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…
InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We,…
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer…
Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…
Recently, atomically thin PdSe$_2$ semiconductors with rare pentagonal Se-Pd-Se monolayers were synthesized and were also found to possess superior properties such as ultrahigh air stability, and high carrier mobility, thus offering a new…