Related papers: Measuring anisotropic spin relaxation in graphene
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…
The XXZ model on a square lattice in the presence of a transverse magnetic field is studied within the spin wave theory to investigate the resulting canted antiferromagnet. The small and large field regimes are probed separately both for…
The concept of anisotropy of spin relaxation in non-magnetic metals with respect to the spin direction of the injected electrons relative to the crystal orientation is introduced. The effect is related to an anisotropy of the Elliott-Yafet…
We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…
Graphene is a powerful membrane prototype for both applications and fundamental research. Rheological phenomena including indentation, twisting, and wrinkling in deposited and suspended graphene are actively investigated to unravel the…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the…
Spin relaxation of a single electron in a weakly coupled double quantum dot is calculated numerically. The phonon assisted spin flip is allowed by the presence of the linear and cubic spin-orbit couplings and nuclear spins. The rate is…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
We investigate the magnetic symmetry of the topological antiferromagnetic material Mn$_3$Ge by using torque measurements. Below the Neel temperature, detailed angle-dependent torque measurements were performed on Mn$_3$Ge single crystals in…
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…
Exploring an upper limit of magnetic anisotropy in two-dimensional materials, such as graphene and transition metal dichalcogenides, is at the heart of spintronics research. Herein, an atomic-scale perpendicular magnetic anisotropy up to an…
Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural…
Van der Waals heterostructures offer a versatile platform for tailoring electrical, magnetic, optical, and spin transport properties of materials through proximity effects. Notably, hexagonal transition metal dichalcogenides have been shown…
Electron spin relaxation in graphene on a substrate is investigated from the fully microscopic kinetic spin Bloch equation approach. All the relevant scatterings, such as the electron-impurity, electron--acoustic-phonon,…
We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was…
The spin Hall effect in ferromagnets is of great interest in the field of spintronics, and while the effect has been quantified in many materials, the dependence of the spin Hall angle on the relative orientation of spin polarization and…
Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly…
We develop a simple method for measuring the electron spin relaxation times $T_1$, $T_2$ and $T_2^*$ in semiconductors and demonstrate its exemplary application to $n$-type GaAs. Using an abrupt variation of the magnetic field acting on…
The paper discusses the influence of the external in-plane electric and magnetic field on the ground state spin phase diagram of selected monolayer graphene nanostructures. The calculations are performed for triangular graphene nanoflakes…