Related papers: Electrical-driven Plasmon Source on Silicon based …
Unlike radiowave antennas, optical nanoantennas so far cannot be fed by electrical generators. Instead, they are driven by light or via optically active materials in their proximity. Here, we demonstrate direct electrical driving of an…
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
We have studied the electron transport through a quantum dot coupled to three leads in the presence of external microwave fields supplied to different parts of the considered mesoscopic system. Additionally, we introduced a possible…
The time-dependent tunnelling current arising from the electron-hole recombination of exciton state is theoretically studied using the nonequilibrium Green's function technique and the Anderson model with two energy levels. The charge…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range…
Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating…
The photorecombination radiation on a neighbor center of an electron ionized in the nonlinear tunneling regime is discussed. In the framework of the active electron model an analytical solution of the problem has been obtained. The…
We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of…
The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the…
Plasmonic superradiance originates from the plasmon mediated strong correlation that builds up between dipolar emitters coupled to a metal nanoparticle. This leads to a fast burst of emission so that plasmonic superradiance constitutes…
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum…
We present a diffusion-based simulation and theoretical models for explanation of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of PL intensity curves can be reproduced by the interplay…
The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing,…
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect…
We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron. The CPEL…