Related papers: Ion Implantation for Deterministic Single Atom Dev…
We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less…
Single ion implantation using focused ion beam systems enables high spatial resolution and maskless doping for rapid and scalable engineering of materials for quantum technologies, particularly qubits and colour centres in solid-state…
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
We focus down an ion beam consisting of single 40Ca+ ions to a spot size of a few mum using an einzel-lens. Starting from a segmented linear Paul trap, we have implemented a procedure which allows us to deterministically load a…
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect…
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical…
Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the…
Optical detection of single defect centers in the solid state is a key element of novel quantum technologies. This includes the generation of single photons and quantum information processing. Unfortunately the brightness of such atomic…
We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the…
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots.…
The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a…
We report on a deterministic single ion source with high repetition rate and high fidelity. The source employs a magneto-optical trap, where ultracold Rubidium atoms are photoionized. The electrons herald the creation of a corresponding…
Using a segmented ion trap with mK laser-cooled ions we have realised a novel single ion source which can deterministically deliver a wide range of ion species, isotopes or ionic molecules [Schnitzler et al., Phys. Rev. Lett. 102, 070501…