Related papers: GaAs droplet quantum dots with nanometer-thin capp…
GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…
Single-photon emitters are essential components for quantum communication systems, enabling applications such as secure quantum key distribution and the long-term vision of a quantum internet. Among various candidates, self-assembled…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…
The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally,…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…
We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for experimental characterization of the waveguide. A topological interface state formed at the interface…
Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…
Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on-demand. One promising candidate are strain free GaAs/AlGaAs quantum dots…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use…
We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic…
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…