Related papers: Spatial behavior in a Mott insulator near the volt…
We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…
We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with…
At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…
The presence of free spins in granular Al films is directly demonstrated by $\mu$SR measurements. A Mott transition is observed by probing the increase of the spin-flip scattering rate of conduction electrons as the nano-size metallic…
Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature $T^{*}$, reflecting the tendency of…
We report the observation of a metal-insulator transition (MIT) in a two- dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field. On going through the MIT we observe the corresponding evolution of the magnetic…
We report on the investigation of the three-dimensional single-atom-resolved distributions of bosonic Mott insulators in momentum-space. Firstly, we measure the two-body and three-body correlations deep in the Mott regime, finding a…
We study a system of fermions in one spatial dimension with linearly confining interactions and short-range disorder. We focus on the zero temperature properties of this system, which we characterize using bosonization and the Gaussian…
We present a muon spin relaxation study of the Mott transition in BaCoS_2 using two independent control parameters: (i) pressure p to tune the electronic bandwidth and (ii) Ni-substitution x on the Co site to tune the band filling. For both…
Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current…
We describe the two-dimensional Mott transition in a Hubbard-like model with nearest neighbors interactions based on a recent solution to the Zamolodchikov tetrahedron equation, which extends the notion of integrability to two-dimensional…
Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function…
The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic…
The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and…
Time reversal symmetric topological insulators are generically robust with respect to weak local interaction, unless symmetry breaking transitions take place. Using dynamical mean-field theory we solve an interacting model of quantum spin…
$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…
We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
The nature of the metal-insulator Mott transition at zero temperature has been discussed for a number of years. Whether it occurs through a quantum critical point or through a first order transition is expected to profoundly influence the…
We analyze the Thermodynamic Bethe Ansatz equations of the one-dimensional half-filled Hubbard model in the "spin-disordered regime", which is characterized by the temperature being much larger than the magnetic energy scale but small…