Related papers: Topology driven g-factor tuning in type-II quantum…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
We explore the scattering of Dirac electrons in a double-gated topological insulator in the presence of magnetic proximity effects and warped surface states. It is found that a magnetic field can shift the Dirac cone in momentum space and…
We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this…
It is commonly believed that the Aharonov-Bohm (AB) effect is a typical feature of the motion of a charged particle interacting with the electromagnetic vector potential. Here we present a magnetophotoluminescence study of type-II InP/GaAs…
The geometry and binding energy of excitons, set by electron-hole wavefunction distributions, are fundamental factors that underpin their many-body interactions and determine optoelectronic properties of semiconductors. However, in typical…
Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Gaussian linking of a semiclassical path of a charged particle with a magnetic flux tube is responsible for the Aharonov-Bohm effect, where one observes interference proportional to the magnitude of the enclosed flux. We construct quantum…
The time evolution of entanglement for excitons in two quantum dots embedded in a single mode cavity is studied in a ``spin-boson'' regime. It is found that although with the dissipation from the boson mode, the excitons in the two quantum…
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Excitons in vertically stacked type-II quantum dots experience the topological magnetic phase and demonstrate the Aharonov-Bohm oscillations in the emission intensity. Photoluminescence of vertically stacked ZnTe/ZnSe quantum dots is…
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are…
The coherent time evolution of electrons in double quantum dots induced by fast bias-voltage switches is studied theoretically. As it was shown experimentally, such driven double quantum dots are potential devices for controlled…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…