Related papers: Uniaxial stress flips the natural quantization axi…
It is shown that in many cases an adequate description of optical spectra of semiconductor quantum dots requires a treatment beyond the commonly used adiabatic approximation. We have developed a theory of phonon-assisted optical transitions…
Epitaxial strain provides a powerful, non-chemical route to tune the properties of functional materials by manipulating the coupling between spin, charge, and lattice degrees of freedom. Using density functional theory (DFT) calculations…
We show that detuned optical pulse trains with a modest spectral width can polarize nuclear spins in InAs quantum dots. The pulse bandwidth is large enough to excite a coherent superposition of both electron spin eigenstates in these…
We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat…
The strain engineering technique allows us to alter the electronic properties of graphene in various ways. Within the continuum approximation, the influences of strain result in the appearance of a pseudo-gauge field and modulated Fermi…
Asymmetrical horizontal interdot coupling was demonstrated to exist in a system of a single plane of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation (PLE), second order photon correlation and optical orientation were…
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…
We consider free electrons in rectangular quantum dots, with either hard wall boundary conditions or anharmonic confinement. In both cases, due to finite size effects, a homogeneous electric field applied along one of the rectangular axis…
We show that, when a spatially localised electric pulse is applied at the edge of a quantum spin Hall system, electron wavepackets of the helical states can be photoexcited by purely intra-branch electrical transitions, without invoking the…
We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the…
A strong, far-detuned laser can shift the energy levels of an optically active quantum system via the AC Stark effect. We demonstrate that the polarization of the laser results in a spin-selective modification to the energy structure of a…
Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and…
We study optical forces acting upon semiconductor quantum dots and the force driven motion of the dots in a colloid. In the spectral range of exciton transitions in uantum dots, when the photon energy is close to the exciton energy, the…
We investigated the effects of uniaxial stress on the pressure-induced alpha-to-omega transition in pure titanium (Ti) by means of angle dispersive x-ray diffraction in a diamond-anvil cell. Experiments under four different pressure…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…
HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states.…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…
Silicon-Germanium (Si$_{1-x}$Ge$_x$) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channel regions to enhance the electron mobility. When reducing…
Due to the advantage of tunability via size, shape, doping and relatively low level of loss and high extent of spatial confinement, graphene quantum dots (GQDs) are emerging as an effective way to control light by molecular engineering. The…
Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sharp interfaces can be achieved for layered SnSe grown…