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Related papers: Polarization-controlled modulation doping of a fer…

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We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with a another ferroelectric material based on first principle calculations. The operating principle is that the rotation of…

Materials Science · Physics 2016-03-11 Xu He , Kui-juan Jin , Chen Ge , Zhong-shui Ma , Guo-zhen Yang

We have developed a new magnetoelectric material based on Ga doped {\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric…

Materials Science · Physics 2018-05-23 R. N. Bhowmik , Abdul Gaffar Lone

Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles…

Materials Science · Physics 2013-12-16 Fabiano Corsetti , Arash A. Mostofi

The electronic functionality of thin films is governed by their interfaces. This is very important for the ferroelectric (FE) state which depends on thin-film clamping and interfacial charge transfer. Here we show that in a heterostructure…

Mesoscale and Nanoscale Physics · Physics 2020-02-24 Michael Huth , Achim Rippert , Roland Sachser , Lukas Keller

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces…

Strongly Correlated Electrons · Physics 2020-07-06 Gal Tuvia , Yiftach Frenkel , Prasanna K. Rout , Itai Silber , Beena Kalisky , Yoram Dagan

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

Materials Science · Physics 2016-12-13 Dirk König , Daniel Hiller , Sebastian Gutsch , Margit Zacharias , Sean Smith

Doping ferroelectrics with carriers is often detrimental to polarization. This makes the design and discovery of metals that undergo a ferroelectric-like transition challenging. In this letter, we show from first principles that the oxygen…

Materials Science · Physics 2021-08-23 Shutong Li , Turan Birol

Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle to their practical applications. A notable reduction in…

Materials Science · Physics 2025-02-11 Tianyuan Zhu , Liyang Ma , Xu Duan , Shi Liu

(Ba,Ca)TiO$_3$ and Ba(Ti,Zr)O$_3$ solid solutions are the building blocks of lead-free piezoelectric materials that attract a renewed interest. We investigate the properties of these systems by means of first-principles calculations, with a…

Materials Science · Physics 2018-06-06 Danila Amoroso , Andres Cano , Philippe Ghosez

We calculate the bulk photovoltaic response of the ferroelectrics BaTiO$_3$ and PbTiO$_3$ from first principles by applying "shift current" theory to the electronic structure from density functional theory. The first principles results for…

Materials Science · Physics 2015-06-04 Steve M. Young , Andrew M. Rappe

A comparative study of the effect of Fe and Ni doping on the bismuth based perovskite La0.6Bi0.4MnO3.1, a projected spintronics magnetic semiconductor has been carried out. The doped systems show an expressive change in magnetic ordering…

Materials Science · Physics 2015-05-27 Asish K. Kundu , Md. Motin Seikh , Akhilesh Srivastava , S. Mahajan , R. Chatterjee , V. Pralong , B. Raveau

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Materials Science · Physics 2014-05-30 Tillmann Krauss , Frank Wessely , Udo Schwalke

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…

Inclusion of correlation effects affects quantitatively the agreement with experiment as far as the value of energy shift and the level of doping is concerned, and our original statement that nesting at ($\pi$,0) can be responsible for…

Superconductivity · Physics 2010-03-17 M. J. Han , S. Y. Savrasov

The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic, or are induced by the addition of dopants. We…

Materials Science · Physics 2013-12-18 Anand Chandasekaran , Dragan Damjanovic , Nava Setter , Nicola Marzari

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of…

Applied Physics · Physics 2019-10-24 Deepa Singh , Francois Magnan , Joe B. Gilroy , Giovanni Fanchini

A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…

Applied Physics · Physics 2026-03-30 Aias Asteris , Thai-Son Nguyen , Huili Grace Xing , Debdeep Jena

In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the…

Materials Science · Physics 2007-05-23 A. N. Morozovska , M. D. Glinchuk , E. A. Eliseev

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating…

Materials Science · Physics 2013-12-18 David J. Singh , David Parker

Ferroelectric switching governs the functional properties of ferroelectric perovskites. It is widely accepted that this switching depends on domain nucleation and pinning and that these processes can be controlled by the defect structure.…

Materials Science · Physics 2026-04-16 Himal Wijekoon , Pierre Hirel , Anna Grünebohm