Related papers: Current Saturation in Nonmetallic Field Emitters
The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…
The saturation number of a graph is the cardinality of a smallest maximal matching. This paper presents bounds for the saturation number of carbon nanocones which are asymptotically equal. The same techniques are applied for the saturation…
The charge/mass distribution f(q/m) of nanodrops and ions electrosprayed in vacuum from mixtures of formamide (FM) and methylammonium formate (MAF) is studied by time of flight mass spectrometry at MAF/FM volumetric concentrations of 5%,…
The distributions of electrical current and magnetic field in a thin-film superconductor ring is calculated by solving the London equation. The maximum amount of flux trapped by the hole, the fluxoid saturation number, is obtained by…
We introduce a formalism to solve the problem of photon scattering from a system of multi-level quantum emitters. Our approach provides a direct solution of the scattering dynamics. As such the formalism gives the scattered fields…
In many field electron emission experiments on single-walled carbon nanotubes (SWCNTs), the SWCNT stands on one of two well-separated parallel plane plates, with a macroscopic field FM applied between them. For any given location "L" on the…
Electronic degrees of freedom and their coupling to lattice vibrations in semiconductors can be strongly modified by doping. Accordingly, the addition of surplus charge carriers to chirality-mixed carbon nanotube samples has previously been…
In this paper, we model the evolution and self-assembly of randomly oriented carbon nanotubes (CNTs), grown on a metallic substrate in the form of a thin film for field emission under diode configuration. Despite high output, the current in…
We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of…
Using first principles calculations as based on density functional theory, we propose a class of so far unexplored diluted ferromagnetic semiconductors and half-metals. Here, we study the electronic properties of recently synthesized $ 4d $…
The present letter extends the prior findings on self-induced heating of solid state field emission devices. It was found that a vacuum diode (base pressure $\sim10^{-9}$ Torr), that makes use of graphite-rich polycrystalline diamond as…
We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
Electron properties of Carbon nanotubes in a transverse magnetic field are studied using a model of a massless Dirac particle on a cylinder. The problem possesses supersymmetry which protects low energy states and ensures stability of the…
Choosing a suitable doping level of channel relevant to channel diameter is considered for determining the carbon nanotube field effect transistors' performance which seem to be the best substitute of current transistor technology. For low…
Representing field emission data on a Fowler--Nordheim plot is both very common and strongly not recommended. It leads to a spurious estimation of the emitter parameters despite a very good data fit. There is a lack of a reliable method of…
Electronic Raman scattering from high- and low-energy excitations was studied as a function of temperature, extent of hole doping, and energy of the incident photons in Bi_2Sr_2CaCu_2O_{8 \pm \delta} superconductors. For underdoped…