Related papers: Multi-scale modelling of current-induced switching…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external…
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Spin-torque nano-oscillators (STNOs) are promising nanoscale microwave sources for spintronic applications, serving as signal generators or elements in neuromorphic computing systems. In this paper, we investigate the experimental…
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
We analytically model the magnetization switching time of a biaxial ferromagnet driven by an antidamping-like spin torque. The macrospin magnetization dynamics is mapped to an energy-flow equation, wherein a rational-function approximation…
The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various…
The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…
Using a pure electric current to control kagome noncollinear antiferromagnets is promising in information storage and processing, but a full description is still lacking, in particular, on intrinsic (i.e., no external magnetic fields or…
This letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…