Related papers: Exfoliation of single layer BiTeI flakes
3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D…
The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…
We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer…
It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…
The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…
We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with…
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…
BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and…
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…
The experimental evidence of the ultra-high electron mobility and strong spin-orbit coupling in the two-dimensional (2D) layered bismuth-based oxyselenide, Bi$_{2}$O$_{2}$Se, makes it a potential material for spintronic devices. However,…
Metal-assisted exfoliation of two-dimensional (2D) materials has emerged as an efficient route to isolating large-area monolayer crystals, yet the influence of the supporting metal substrate on their intrinsic properties remains poorly…
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of…
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a…
Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here,…
Antimony telluroiodide (SbTeI) is predicted to be a promising material in many technological applications based on theoretical simulations, however the bulk structure solution remains elusive. We consolidate SbTeI belonging to the…
We theoretically propose the necessary conditions for realization of giant Rashba splitting in bulk systems. In addition to (i) the large atomic spin-orbit interaction in an inversion-asymmetric system, the following two conditions are…
We carry out a detailed theoretical study of the electronic and optical properties of bulk and monolayer bismuth triiodide (BiI$_{3}$), a layered metal halide, using the ab initio GW+BSE scheme with a full spinorial formulation. We discuss…
Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band…
The established diversity of electronic topology classes lends the opportunity to pair them into dual topological complexes. Bulk-surface correspondence then ensures the coexistence of a combination of boundary states that cannot be…