Related papers: Mechanical Switching of Nanoscale Multiferroic Pha…
The realization of fully reconfigurable, voltage-controlled, and programmable on-chip magnonic devices is essential to fully harness the potential of spin waves for signal processing, logic and neuromorphic computing. Yet, existing…
The realization of two-dimensional multiferroics offers significant potential for nanoscale device functionality. However, type-I two-dimensional multiferroics with strong magnetoelectric coupling, enabling electric field control of spin,…
The general approach for the consideration of the magnetoelectric effects in ferroic nanorods is proposed in the framework of the phenomenological theory. The intrinsic surface stress, magneto- and electrostriction as well as piezoelectric…
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…
This paper analyzes how the ferroelectric properties of cubic-like BiFeO$_3$ nanoparticles are affected by different terminations and charge distributions at the surface using ab-initio-based atomistic computational experiments. Our…
Most multiferroic materials with coexisting ferroelectric and magnetic order exhibit cycloidal antiferromagnetism with wavelength of several nanometers. The prototypical example is bismuth ferrite (BiFeO$_3$ or BFO), a room-temperature…
Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
Controlling the polarization switching in the ferroelectric nanocrystals, nanowires and nanodots has an inherent specificity related to the emergence of depolarization field that is associated with the spontaneous polarization. This field…
We present a simple two-dimensional model in which the lattice degrees of freedom mediate the interactions between magnetic moments and electric dipoles. This model reproduces basic features, such as a sudden electric polarization…
In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and…
The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the…
Nanoscale electrostatic control of oxide interfaces enables physical phenomena and exotic functionalities beyond the realm of the bulk material. In technologically-relevant ferroelectric thin films, the interface-mediated polarization…
We have studied the structural phase transition of multiferroic YMnO$_3$ from first principles. Using group-theoretical analysis and first-principles density functional calculations of the total energy and phonons, we perform a systematic…
Nanoscale multiferroics are basic model objects for studying polar, magnetic and magnetoelectric properties and mutual couplings. Bismuth-samarium ferrite (Bi1-xSmxFeO3) is a model orthoferrite, whose polar, magnetic and magnetoelectric…
Multiferroics, combining ferroelectric and magnetic orders, enable magnetoelectric (ME) coupling for advanced applications. This mini review explores single-phase and composite multiferroics, examining phenomenological, microscopic,…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control…
The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such…