Related papers: Photoferroelectric oxides
Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray…
Bulk chalcogenide perovskite BaZrS3 (BZS), with a direct band gap in visible region, is an important photovoltaic material, albeit with limited applicability owing to its antiferroelectric (AF) nature. Presently, ferroelectric (FE)…
Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability.…
The ferroelectric domain structure of a freestanding BiFeO$_3$ film was visualized by ptychographic dichroic imaging with linearly polarized X-rays at the O K-edge around 530 eV. The dichroic contrast is maximized at the energy of the…
We have observed photocarrier transport behaviors in BiFeO$_3$/La$_{1-x}$Sr$_x$MnO$_3$~(BFO/LSMO) heterostructures by using time-resolved synchrotron x-ray magnetic circular dichroism in reflectivity. The magnetization of LSMO layers was…
Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene…
Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly…
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related…
Ferroelectric anomalous photovoltaic (APV) effect, as a fascinating physical conceptual phenomenon, holds significant potentials for new optoelectronic device applications. However, due to the knowledge lacking on the origin and underlying…
We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model…
Metal oxide nanocrystals are emerging as extremely versatile material for addressing many of the current challenging demands of energy-conversion technology. Being able to exploit their full potential is not only an advantage but also a…
Emerging ferroic materials may pave a new way to next-generation nanoelectronic and spintronic devices due to their interesting physical properties. Here, we systematically review unconventional ferroelectric systems, from Hf-based and…
The extrinsic size effect in Piezoresponse Force Microscopy of ferroelectric and piezoelectric thin films on non-polar dielectric substrate is analyzed. Analytical expressions for effective piezoresponse, object transfer function…
The aim of this Chapter is to provide an account of recent advances in the first-principles modeling of ferroelectric oxide nanostructures. Starting from a microscopic description of ferroelectricity in bulk materials and considering then,…
Ferroics and multiferroics are unique objects for fundamental physical research of complex nonlinear processes and phenomena, which occur in them in micro and nanoscale. Due to the possibility of their physical properties control by size…
The observation of ferroelectric, ferromagnetic and ferroelastic phases in thin films of binary oxides attract the broad interest of scientists and engineers. However, the theoretical consideration of observed behaviour physical nature was…
Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…
The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future…
Using the density functional theory calculations, we studied the ferroelectric, electrical and optical properties of series of bias-controllable endohedral fullerenes (TM@C28, TM= Ti-Ni). The important finding is that Cr@C28 has a large…
The pyroelectric effect in ferroelectric thin films is typically composed of different contributions, which are difficult to disentangle. In addition, clamping to the substrate interface plays an important role. We studied epitaxial…