Related papers: GaZn-VZn acceptor complex defect in Ga-doped ZnO
A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field…
ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that…
Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H2O2) treatment durations were measured to examine several point defects on the surface of the films. These results suggest successful oxidation…
Based on density functional theory calculations, we systematically investigate the behaviors of a H atom in Ag-doped ZnO, involving the preference sites, diffusion behaviors, the electronic structures and vibrational properties. We find…
We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs…
The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excitations in these nanostructures. The native defect induced…
In this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were…
We report thickness dependent metal insulator transition in Ga doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film exhibits a resistivity…
III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to achieve enhanced light output from even smaller…
We investigated the optical properties of epitaxial \textit{n}- and \textit{p}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. Chemical doping yielded a severe inhomogeneity in a statistical distribution of involved charged…
Thermal quenching is one of the essential factors in reducing the efficiency of radiative processes in luminophores of various nature. The emission activity of low dimensional structures is influenced also by multiplicity of parameters that…
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes…
The growth of heavily doped tunnel junctions in inverted metamorphic multijunction solar cells induces a strong diffusion of Zn via a point-defects-assisted mechanism. The redistribution of Zn can compensate the n-type doping in the emitter…
We study the Li interstitial diffusion in pristine and defective ZnO bulk by means of first-principles density functional theory (DFT) coupled with Nudged Elastic Band (NEB) calculations. We consider three types of point defects, i.e.,…
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in-situ and ex-situ 63 MeV proton irradiation to assess…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such…
We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside…
ZnO is co-doped with Na+ and Si4+ in the ratio 2:1. The ratio was intentionally chosen so that net valence state of dopant theoretically matches that of host. This is to avoid dependence in the amount of oxygen vacancies/interstitials…
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of…