Related papers: Efficient and controlled domain wall nucleation fo…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
The manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned…
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale…
The dynamics of a 90$^{\circ }$ domain wall in an antiferromagnetic nanostrip driven by the current-induced spin-orbital torque are theoretically examined in the presence of random thermal fluctuations. A soliton-type equation of motion is…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is…
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by…
We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the…
The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) materials present a particularly promising platform due to…
We demonstrate a unique prospect for inducing anisotropic vortex pinning and manipulating the directional motion of vortices using the stripe domain patterns of a uniaxial magnetic film in a the superconducting/ferromagnetic hybrid. Our…
Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in…
A domain wall and spin supercurrent can coexist in magnets with easy-cone anisotropy owing to simultaneous spontaneous breaking of Z$_2$ and U(1) symmetries. Their interaction is theoretically investigated in quasi one-dimensional…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
This review describes in detail the essential techniques used in microscopic theories on spintronics. We have investigated the domain wall dynamics induced by electric current based on the $s$-$d$ exchange model. The domain wall is treated…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
The functionality of ferroelastic domain walls in ferroelectric materials is explored in real-time via the in-situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional…
The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility.…
Spin wave and magnetic domain wall are two of basic excitations in magnetic systems, and their spatiotemporal interplay encodes rich information of underlying magnetic interactions. In synthetic antiferromagnets, the domain wall acquires an…