Related papers: Robust Helical Edge Transport in Quantum Spin Hall…
We propose a generalized Dirac fermion description for the electronic state of graphene terminated by a zigzag edge. This description admits a spin-orbit coupling needed to preserve time-reversal invariance of the zigzag confinement,…
We study numerically the edge magnetoconductance of a quantum spin Hall insulator in the presence of quenched nonmagnetic disorder. For a finite magnetic field B and disorder strength W on the order of the bulk gap E_g, the conductance…
Quantum Hall systems are characterized by the quantization of the Hall conductance -- a bulk property rooted in the topological structure of the underlying quantum states. In condensed matter devices, material imperfections hinder a direct…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
A single massive Dirac surface band is predicted to exhibit a half-quantized Hall conductance, a hallmark of the C = 1/2 parity anomaly state in quantum field theory. Experimental signatures of the C = 1/2 parity anomaly state have been…
Time-dependent perturbations can drive a trivial two-dimensional band insulator into a quantum Hall-like phase, with protected nonequilibrium states bound to its edges. We propose an experiment to probe the existence of these topological…
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface…
The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin-polarized edge states that are protected by the…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs…
Topological insulators are a newly discovered phase of matter characterized by a gapped bulk surrounded by novel conducting boundary states. Since their theoretical discovery, these materials have encouraged intense efforts to study their…
Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a…
We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion…
Motivated by surprises in recent experimental findings, we study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained from a…
We investigate the magnetotransport of topological Dirac semimetals (DSMs) by taking into account the Lifshitz transition of the Fermi arc surface states. We demonstrate that a bulk momentum-dependent gap term, which is usually neglected in…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
Recently, higher-order topological matter and 3D quantum Hall effects have attracted great attention. The Fermi-arc mechanism of the 3D quantum Hall effect proposed in Weyl semimetals is characterized by the one-sided hinge states, which do…
Dirac points in two-dimensional electronic structures are a source for topological electronic states due to the $\pm \pi$ Berry phase that they sustain. Here we show that two rutile multilayers (namely (WO$_2$)$_2$/(ZrO$_2$)$_n$ and…
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering…
When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted…