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Single defect centers in layered hexagonal boron nitride (hBN) are promising candidates as single photon sources for quantum optics and nanophotonics applications. However, until today spectral instability hinders many applications. Here,…
FeSe$_{1-x}$Te$_{x}$ thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO$_{4}$(001) substrates from FeSe$_{1-x}$Te$_{x+d}$ polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO…
Optimizing the photovoltaic efficiency of dye-sensitized solar cells (DSSC) based on staggered gap heterojunctions requires a detailed understanding of sub-band gap transitions in the visible from the dye directly to the substrate's…
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn(1-x)MgxO core shell quantum…
CdTe is the most commercially successful thin-film photovoltaic technology to date. The recent development of Se-alloyed CdSe$_{x}$Te$_{1-x}$ layers in CdTe solar cells has led to higher device efficiencies, due to a lowered bandgap…
Photonic resonators allowing to confine the electromagnetic field in ultra-small volumes and with long decay times are crucial to a number of applications requiring enhanced nonlinear effects. For applications to integrated photonic devices…
High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be protected by capping with inert materials such as amorphous…
At the ultra-thin film limit, quantum confinement strongly improves thermoelectric figure of merit in materials such as Sb$_2$Te$_3$ and Bi$_2$Te$_3$. These high quality films have only been realized using well controlled techniques such as…
Large chemical tunability and strong light-matter interactions make colloidal transition metal dichalcogenide (TMD) nanostructures particularly suitable for light-emitting applications. However, ultrafast exciton decay and quenched…
Metal chalcogenides are promising layered topological materials, yet their electronic performance is often limited by parasitic bulk conduction arising from defects that introduce excess carriers and shift the Fermi level out of the…
Low-loss superconducting rf devices are required when used for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packaging of our superconducting resonator devices affect…
The discovery of Fe-based superconductors (FBS) as the second class of high-temperature superconducting transition (high-Tc) materials after the cuprates generated a significant impact on the community of fundamental and applied…
We report the successful growth of tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in…
Freestanding Silicon nitride (SiN) devices are central to the field of nanomechanical resonators and for other technology applications such as transmission electron imaging and nanopore bioassays. The nanofabrication techniques used for…
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard…
We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected…
We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric…
Colloidal quantum dots (cQDs) have emerged as a cornerstone of next-generation optoelectronics, offering unparalleled spectral tunability and solution-processability. However, the transition from laboratory-scale devices to sustainable…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…