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Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…

Mesoscale and Nanoscale Physics · Physics 2016-01-22 A. J. Sigillito , R. M. Jock , A. M. Tyryshkin , J. W. Beeman , E. E. Haller , K. M. Itoh , S. A. Lyon

We have analyzed effects of the hyperfine interaction on electric dipole spin resonance when the amplitude of the quantum-dot motion becomes comparable or larger than the quantum dot's size. Away from the well known small-drive regime, the…

Mesoscale and Nanoscale Physics · Physics 2016-05-04 Stefano Chesi , Li-Ping Yang , Daniel Loss

We study theoretically the electron spin noise in quantum dots under non-equilibrium conditions caused by the pumping by a train of circularly polarized optical pulses. In such a situation, the nuclear spins are known to adjust in such a…

Mesoscale and Nanoscale Physics · Physics 2018-08-01 Natalie Jäschke , Frithjof B. Anders , Mikhail M. Glazov

We demonstrate nuclear double resonance for nanometer-scale volumes of spins where random fluctuations rather than Boltzmann polarization dominate. When the Hartmann-Hahn condition is met in a cross-polarization experiment, flip-flops occur…

Statistical Mechanics · Physics 2017-08-07 M. Poggio , H. J. Mamin , C. L. Degen , M. H. Sherwood , D. Rugar

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…

We report $^{29}$Si NMR measurements in single crystals and aligned powders of URu$_2$Si$_2$ in the hidden order and paramagnetic phases. The spin-lattice-relaxation data reveal evidence of pseudospin fluctuations of U moments in the…

We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…

Electron spin qubits in molecular systems offer high reproducibility and the ability to self assemble into larger architectures. However, interactions between neighbouring qubits are 'always-on' and although the electron spin coherence…

Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Y. Masumoto , B. Pal , S. Oguchi , M. Ikezawa

We investigate the erbium flip-flop dynamics as a limiting factor of the electron spin lifetime and more generally as an indirect source of decoherence in rare-earth doped insulators. Despite the random isotropic arrangement of dopants in…

Quantum Physics · Physics 2019-10-09 B. Car , L. Veissier , A. Louchet-Chauvet , J. -L. Le Gouët , T. Chanelière

We investigate in detail, using both analytical and numerical tools, the decoherence of electron spins in quantum dots (QDs) coupled to a bath of nuclear spins in magnetic fields or with various initial bath polarizations, focusing on the…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Wenxian Zhang , V. V. Dobrovitski , K. A. Al-Hassanieh , E. Dagotto , B. N. Harmon

The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment,…

We study decoherence of nuclear spins in a nanoscale GaAs device based on resistively detected nuclear magnetic resonance (NMR). We demonstrate how the spin echo technique can be modified for our system, and this is compared to the damping…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Go Yusa , Norio Kumada , Koji Muraki , Yoshiro Hirayama

Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree…

Mesoscale and Nanoscale Physics · Physics 2022-05-12 Oscar Bulancea-Lindvall , Matthew Travis Eiles , Nguyen Tien Son , Igor A. Abrikosov , Viktor Ivády

Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability…

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…

Materials Science · Physics 2009-11-13 C. C. Lo , J. Bokor , T. Schenkel , A. M. Tyryshkin , S. A. Lyon

Isolated electron spins in semiconductor nanostructures are promising qubit candidates for a solid state quantum computer, There have seen truly impressive experimental progresses in the study of single spins in the past two years. In this…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Changxue Deng , Xuedong Hu

Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible…

Optically addressable molecular triplet spins provide a chemically tunable platform for quantum application, but their coherence is often limited by interactions with surrounding spin baths. Here we demonstrate controlled suppression of…

We investigate theoretically the spin echo signal of an electron localized in a quantum dot and interacting with a bath of nuclear spins. We consider the regime of very low magnetic fields (corresponding to fields as low as a militesla in…

Mesoscale and Nanoscale Physics · Physics 2010-07-26 L. Cywinski , V. V. Dobrovitski , S. Das Sarma
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