Related papers: Half-metal phases in a quantum wire with modulated…
We present a study of the electronic structure and magnetism of Co$_2$MnAl, CoMnVAl and their heterostructure. We employ a combination of density-functional theory and dynamical mean-field theory (DFT+DMFT). We find that Co$_2$MnAl is a…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
We propose the realization of linear crystals of cold ions which contain different atomic species for investigating quantum phase transitions and frustration effects in spin system beyond the commonly discussed case of $s=1/2$. Mutual…
We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…
We report here numerical results of the low-temperature behavior of a dipolar spin ice in a magnetic field along the [100] direction. Tuning the magnetic field, the system exhibit a half-magnetization plateau at low temperature. This…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
Although quantum phase transitions involved with Anderson localization had been investigated for more than a half century, the role of spin polarization in these metal-insulator transitions has not been clearly addressed as a function of…
We evaluate the charge and longitudinal spin response functions of a two-dimensional electron gas with $e^2/r$ interactions in an arbitrary state of spin polarization, using a structurally self-consistent approach to treat exchange and…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
A half-mirror that divides a spin-polarized electron into two parallel copropagating spin-resolved quantum Hall edge channels one half each is presented in this study. The partition process was coherent, as confirmed by observing the…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
We extend the coupled-wire construction of quantum Hall phases, and search for fractional topological insulating states in models of weakly coupled wires at zero external magnetic field. Focussing on systems beyond double copies of…
Spin-orbit coupling introduces chirality into electronic structure. This can have profound effects on the magnetization induced by orbital motion of electrons. Here we derive a formula for the orbital magnetization of interacting electrons…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi…
From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin…
Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…
We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon…
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…