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Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…
Using the transport and magnetization measurements the influence of neutron irradiation at a fluence of 5x10$^{17}$ n cm$^{-2}$ on (B0.65C0.35)Ba1.4Sr0.6Ca2Cu3Oz has been investigated. The neutron irradiation was found to decrease critical…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively…
We study the dc conductance and current fluctuations in diffusive voltage biased SNS junctions with a tunnel barrier inside the mesoscopic normal region. We find that at subgap voltages, eV<2Delta/n, the current associated with the chain of…
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of…
Graphene nanoribbons (GNRs) with atomically precise width and edge structures are a promising class of nanomaterials for optoelectronics, thanks to their semiconducting nature and high mobility of charge carriers. Understanding the…
The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire superlattices. The effects of this space structuring of the…
Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many prospective applications such as rectification and…
We consider the Nernst-Ettingshausen (NE) effect in the presence of semiclassically strong magnetic fields for a quasi-two dimensional system with a parabolic or linear dispersion of carriers. We show that the occurring giant oscillations…
Materials exhibiting negative differential resistance have important applications in technologies involving microwave generation, which range from motion sensing to radio astronomy. Despite their usefulness, there has been few physical…
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Green's function method, we study the band structure of BGNs in uniform perpendicular…
The thermoelectric Nernst effect of solids converts heat flow to beneficial electronic voltages. Here, using a correlated topological semimetal with high carrier mobility $\mu$ in presence of magnetic fluctuations, we demonstrate an…
This comprehensive study investigates charge transport through the multiple end zigzag edge states of finite-size armchair graphene nanoribbons/boron nitride nanoribbons (n-AGNR/w-BNNR) junctions under a longitudinal electric field, where n…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
Reconfigurable nonlinear-processing units (RNPUs) are multi-terminal electronic devices that act as computational primitives, exploiting intrinsic nonlinear charge transport combined with electrostatic tunability. Silicon-based realizations…
The intrinsic transport properties of zigzag graphene nanoribbons (ZGNRs) are investigated using first principles calculations. It is found that although all ZGNRs have similar metallic band structure, they show distinctly different…
The spin dependent charge transport in zigzag graphene nanoribbons (ZGNRs) has been investigated by the nonequilibrium Green's function method combined with the density functional theory at the local spin density approximation. The current…