Related papers: Photoconductive response of strained silicon nanow…
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a…
In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed,…
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
Investigations into the propagation characteristics, specifically loss and wave velocity, of superconducting coplanar waveguides and microstrip lines were conducted at a 2 mm wavelength. This was achieved through the measurement of on-chip…
We carry out numerical calculations of the scattering cross section of tubular semiconductor nanocylinders in the optical range. The scattering is investigated for the transversal incidence of light, i.e., along the diameter of the…
It has been shown in recent experiments that electronic transport through a gold monatomic nanowire is dissipative above a threshold voltage due to excitation of phonons via the electron-phonon interaction. We address that data by…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
We report the fabrication and photoresponse of 5 nm thick La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ nanostrip with a width of 100nm. The I-V characteristics of the nanostrip show a hysteresis and a sharp voltage jump at $I_{c}$. The $J_{c}$(3K) of…
The nonlinear photoacoustic response of indium phosphide nanocrystals on silicon nanotip arrays is investigated using time-resolved optical pump-probe spectroscopy and synchrotron-based X-ray diffraction. Femtosecond laser excitation…
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…
We present a compact current sensor based on a superconducting microwave lumped-element resonator with a nanowire kinetic inductor, operating at 4.2 K. The sensor is suitable for multiplexed readout in GHz range of large-format arrays of…
We present electronic transport characteristics of ternary alloy Cd1-xZnxS nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of…
We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re({\gamma}) = 1200W-1m-1.
We present atomistic valence force field calculations of thermal transport in Si nanowires of diameters from 12nm down to 1nm. We show that as the diameter is reduced, the phonon density-of-states and transmission function acquire a finite…
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent.…
We demonstrate photonic crystal L3 cavities with resonant wavelength around 1.078 \textmu m on undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons.\enspace We have optimised a…
We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1-10nm . We use the modified valence force field method to compute the phononic dispersion, and extract the density of states,…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…