Related papers: Photoconductive response of strained silicon nanow…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Micro-channels of nanosized columnar tracks were planted by heavy-ion irradiation into superconducting microwave microstrip resonators that were patterned from YBa2Cu3O7-x thin films on LaAlO3 substrates. Three different ion fluences were…
We report the fabrication of high Tc superconducting wires by photodoping a GdBa2Cu3O{6.5} thin film. An optical near-field probe was used to locally excite carriers in the system at room temperature. Trapping of the photogenerated…
We demonstrate a fully coherent supercontinuum spectrum spanning 500 nm from a silicon-on-insulator photonic wire waveguide pumped at 1575 nm wavelength. An excellent agreement with numerical simulations is reported. The simulations also…
Superconducting nanowire single-photon detectors (SNSPDs) perform single-photon counting with exceptional sensitivity and time resolution at near-infrared wavelengths. State-of-the-art SNSPDs, based on 100 nm-wide, 4 to 5 nm thick NbN…
The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…
In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By…
We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a…
Scaling the photon-detection area of superconducting nanowire single-photon detectors (SNSPDs) has traditionally been achieved by nanowire meandering. However, material inhomogeneities and fabrication-induced defects, such as line-edge…
Thermal transport of nanocrystalline Si is of great importance for the application of thermoelectrics. A better understanding of the modal thermal conductivity of nanocrystalline Si will be expected to benefit the efficiency of…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…
We performed comparative experimental investigation of superconducting NbN nanowires which were prepared by means of positive-and negative electron-beam lithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist. We show…
Light trapping in planar ultrathin-film solar cells is limited due to a small number of optical modes available in the thin-film slab. A nanostructured thin-film design could surpass this limit by providing broadband increase in the local…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
Heat transport at nanoscales in semiconductors is investigated with a statistical method. The Boltzmann Transport Equation (BTE) which characterize phonons motion and interaction within the crystal lattice has been simulated with a Monte…
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation…
Coupling of two dielectric wires with rectangular cross-section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross-section and…