Related papers: Spin-orbit torques induced by interface-generated …
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
In a ferromagnet/heavy-metal bilayer device with strong spin Hall effect an in-plane current excites magnetic dynamics through spin torque. We analyze bilayers with perpendicular magnetization and calculate three-dimensional phase diagrams…
Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
In systems with small spin-orbit coupling, current-induced torques on the magnetization require inhomogeneous magnetization textures. For large spin-orbit coupling, such torques exist even without gradients in the magnetization direction.…
In bilayer nanowires consisting of a ferromagnetic layer and a non-magnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic…
Magnetic resonances driven by current-induced torques are crucial tools to study magnetic materials but are very limited in frequency and mechanical efficiency. We propose an alternative mechanism, voltage-induced torque, to realize high…
Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient…
A theoretical study on how synchronization and resonance-like phenomena in superparamagnetic tunnel junctions can be driven by spin-transfer torques is presented. We examine the magnetization of a superparamagnetic free layer that reverses…
A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
Spin-orbit interaction accounts for the coupling of momentum and spin degrees of freedom of electrons and holes in semiconductor materials. In quantum information processing, it allows for electrical control of spin states and for the…