Related papers: Design rules for modulation-doped AlAs quantum wel…
The dependences of the transport scattering time {\tau}t, quantum lifetime {\tau}q, and their ratio {\tau}t/{\tau}q on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period…
Bismide semiconductor materials and heterostructures are considered a promising candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and spintronic devices. This work presents a detailed theoretical study…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional…
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of…
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well…
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these…
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…