Related papers: Nonlinear carrier dynamics in silicon nano-wavegui…
We report static and time-resolved terahertz (THz) conductivity measurements of a high- performance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of…
The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = \Sigma r_i , which rules out the interactions between carrier recombination pathways. Here we challenge this…
We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…
Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing the occurrence of dissipative effects, this process can be…
We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\bar 2\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier…
We study the carrier relaxation dynamics in thin black phosphorus (bP) using time-resolved differential transmission measurements. The inter-band and intra-band transitions, relaxation, and carrier recombination lifetimes are revealed by…
Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon ($\mathrm{C_N}$) has been suggested to be a nonradiative recombination center in GaN devices, a complete…
We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under…
The use of ultrafast pump-probe conductivity (PPC) for studies of photoelectron dynamics in nonpolar molecular liquids has been based upon the perturbation of geminate recombination dynamics of trapped electrons by their laser…
The increased complexity and reduced size of (opto-)electronic devices demands for quantitative descriptions of excess carrier transport and recombination via various mechanisms. In addition, experimental methods capable of resolving…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
Wavelength-dependent pump-probe spectroscopy of micelle-suspended single-walled carbon nanotubes reveals two-component dynamics. The slow component (5-20 ps), which has not been observed previously, is resonantly enhanced whenever the pump…
Understanding how the complex intermolecular- and nano-structure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a…
Metastable cubic tin(II) sulfide ($\pi$-SnS) is an earth-abundant semiconductor whose three-dimensionally bonded chiral lattice may overcome the short minority-carrier lifetime of orthorhombic SnS while maintaining a near-ideal bandgap for…
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…
The slow decay of charge carriers in polymer-fullerene blends measured in transient studies has raised a number of questions about the mechanisms of nongeminate recombination in these systems. In an attempt to understand this behavior, we…
Nanoparticles of very small size (below 10 nm) of TiO2 material are nowadays the functional building blocks of many developing technological applications. Nano is clearly different from bulk or extended systems as regards surface area,…
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a…
Magnetic layered ternary chalcogenides hold great promise for future spin-optoelectronic devices in the two dimensional limit. Understanding how the properties of the materials are impacted by magnetic ordering and the spin-orbit…
Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this…