Related papers: Robust Large Gap Quantum Spin Hall Insulators in M…
We study three dimensional generalizations of the quantum spin Hall (QSH) effect. Unlike two dimensions, where the QSH effect is distinguished by a single $Z_2$ topological invariant, in three dimensions there are 4 invariants…
Based on first-principles calculations, we have found a family of 2D transition-metal (TM) chalcogenides MX5 (M = Zr, Hf and X = S, Se and Te) can host quantum spin Hall (QSH) effect. The molecular dynamics simulation indicate that they are…
Magnetic topological insulators (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ ($n=0,1,2,3$) are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the Bi$_2$Te$_3$ layer…
Despite the rapid progresses in the field of quantum spin Hall (QSH) effect, most of the QSH systems studied up to now are based on crystalline materials. Here we propose that the QSH effect can be realized in quasicrystal lattices (QLs).…
We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…
Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH…
Topological insulators (TIs) are a novel class of materials with nontrivial surface or edge states. Time-reversal symmetry (TRS) protected TIs are characterized by the Z2 topological invariant and their helical property becomes lost in an…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…
Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state,…
Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among them, high-Chern-number QAH insulators offer multiple…
Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless…
Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111)…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…
We theoretically propose that the monolayer $A$Ti$X$ family (KTiSb, KTiBi, RbTiSb, SrTiSn) are potential candidates for large-gap quantum anomalous Hall insulators with high Chern number $\mathcal{C}=2$. Both of the topology and magnetism…
Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…