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Related papers: Probing low noise at the MOS interface with a spin…

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We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Binhui Hu , C. H. Yang

We theoretically consider the temporal dynamics of two coupled spin qubits (e.g., semiconductor quantum dots) driven by the inter-qubit spin-spin coupling. The presence of environmental noise (e.g., charge traps, nuclear spins, random…

Mesoscale and Nanoscale Physics · Physics 2016-07-29 S. Das Sarma , Robert E. Throckmorton , Yang-Le Wu

Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOSFETs offers great potentialities in terms of integration…

Quantum Physics · Physics 2022-04-06 L. Bellentani , M. Bina , S. Bonen , A. Secchi , A. Bertoni , S. Voinigescu , A. Padovani , L. Larcher , F. Troiani

One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising…

Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been…

Mesoscale and Nanoscale Physics · Physics 2021-05-05 Guo Xuan Chan , Jason P. Kestner , Xin Wang

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the…

Mesoscale and Nanoscale Physics · Physics 2018-01-25 Martin Rudolph , Bahman Sarabi , Roy Murray , Malcolm S. Carrol , Neil M. Zimmerman

The strong spin-orbit interaction in silicon and germanium hole quantum dots enables all-electric microwave control of single spins but is unsuited for multi-spin exchange-only qubits that rely on scalable discrete signals to suppress…

Mesoscale and Nanoscale Physics · Physics 2026-02-11 Stefano Bosco , Maximilian Rimbach-Russ

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…

All-electrical baseband control of qubits facilitates scaling up quantum processors by removing issues of crosstalk and heat generation. In semiconductor quantum dots, this is enabled by multi-spin qubit encodings, such as the exchange-only…

Mesoscale and Nanoscale Physics · Physics 2025-11-10 Maximilian Rimbach-Russ , Valentin John , Barnaby van Straaten , Stefano Bosco

In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange…

We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…

Mesoscale and Nanoscale Physics · Physics 2018-05-02 Léo Bourdet , Yann-Michel Niquet

(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…

Quantum Physics · Physics 2025-01-24 Takafumi Tokunaga , Hiromichi Nakazato

Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to developing a scalable multibit information processing device…

Mesoscale and Nanoscale Physics · Physics 2012-09-26 Sophia E. Economou , Juan I. Climente , Antonio Badolato , Allan S. Bracker , Daniel Gammon , Matthew F. Doty

The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance…

Quantum Physics · Physics 2022-10-12 Fernando A. Calderon-Vargas , Edwin Barnes , Sophia E. Economou

Spin-orbit coupling is ubiquitous in quantum dot quantum computing architectures, and makes spin qubits susceptible to charge noise. We derive a Hamiltonian describing the effect of spin-orbit and noise on a single-spin qubit in a quantum…

Mesoscale and Nanoscale Physics · Physics 2014-11-14 Adam Bermeister , Daniel Keith , Dimitrie Culcer

We introduce a novel optical interface between a singlet-triplet spin qubit and a photonic qubit which would offer new prospects for future quantum communication applications. The interface is based on a 220 nm thick GaAs/Al-GaAs…

Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our…

Control of entanglement between qubits at distant quantum processors using a two-qubit gate is an essential function of a scalable, modular implementation of quantum computation. Among the many qubit platforms, spin qubits in silicon…

Semiconductor quantum dots with confined electron or hole spins show promise for quantum information processing as they allow for efficient electric field-driven qubit manipulation. However, their susceptibility to electric noise poses a…

Mesoscale and Nanoscale Physics · Physics 2024-08-08 Yaser Hajati , Guido Burkard

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…

Mesoscale and Nanoscale Physics · Physics 2011-07-27 W. H. Lim , C. H. Yang , F. A. Zwanenburg , A. S. Dzurak
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