Related papers: Manipulating quantum Hall edge channels in graphen…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
We investigate new properties of the Dirac electrons in the finite graphene sample under perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…
Motivated by surprises in recent experimental findings, we study transport in a model of a quantum Hall edge system with a gate-voltage controlled constriction. A finite backscattered current at finite edge-bias is explained from a…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
The burgeoning field of atomic level material control holds great promise for future breakthroughs in quantum and memristive device manufacture and fundamental studies of atomic-scale chemistry. Realization of atom-by atom control of matter…
Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…
Using a low-temperature atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a quantum Hall conductor in the presence of a gate-induced non-equilibrium edge state population at n=3. We observe sharp voltage…
The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH…
Quantum transport on structured networks is strongly influenced by interference effects, which can dramatically modify how information propagates through a system. We develop a quantum-information-theoretic framework for scattering on…
We study transport properties of the helical edge channels of a quantum spin Hall (QSH) insulator, in the presence of electron-electron interactions and weak, local Rashba spin-orbit coupling. The combination of the two allows for inelastic…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…
Quantum Hall (QH) edge channels appear not only along the edge of the electron gas but also along an interface between two QH regions with different filling factors. However, the fundamental transport characteristics of such interface…
Motivated by a recent experiment (Sanchez-Yamagishi et.al, arXiv:1602.06815) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a…