Related papers: Gate-Sensing Charge Pockets in the Semiconductor Q…
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency…
In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge…
As the complexity of mesoscopic quantum devices increases, simulations are becoming an invaluable tool for understanding their behavior. This is especially true for the superconductor-semiconductor heterostructures used to build…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot…
A semiconductor-based charge qubit, confined in double quantum dots, can be a platform to implement quantum computing. However, it suffers severely from charge noises. Here, we provide a theoretical framework to implement universal…
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target…
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…
Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are…