Related papers: Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-…
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010), (001), (110), and (011) orientation dependence of high…
We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a…
The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility…
Magnetism in two-dimensional materials is of great importance in discovering new physical phenomena and developing new devices at the nanoscale. In this paper, first-principles simulations are used to calculate the electronic and magnetic…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to…
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by PDI-8CN2. We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the…
Interlayer coupling effects between high mobility two-dimensional superconductors are studied in bilayer delta-doped SrTiO3 heterostructures. By tuning the undoped SrTiO3 spacer layer between the dopant planes, clear tunable coupling is…
The effect of a spatially modulated magnetic field on the weak localization phenomenon in two-dimensional electron gas (2DEG) is studied. Both the dephasing time $\tau_H$ and magnetoresistance are shown to reveal a nontrivial behavior as…
Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and…
In this present study, we systematically investigated the structural, electronic, optical and transport properties of pristine and group II, group IVa doped GaS monolayers using density functional theory (DFT). The strong formation energy…
Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic…
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…
The rich phase diagram of the two dimensional electron gas (2DEG) at the \STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks to a special bridge design we are able to tune through the superconducting transition…
Application of pressures or electron-doping through Co substitution into Fe sites transforms the itinerant antiferromagnet BaFe(2)As(2) into a superconductor with the Tc exceeding 20K. We carried out systematic transport measurements of…
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These…
We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding $40\times 10^6$ cm$^2$ / (Vs). Several devices were fabricated, with the highest achieved…
High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling…
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…