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Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…

Mesoscale and Nanoscale Physics · Physics 2016-09-15 J. Salfi , J. A. Mol , R. Rahman , G. Klimeck , M. Y. Simmons , L. C. L. Hollenberg , S. Rogge

The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…

Mesoscale and Nanoscale Physics · Physics 2021-07-05 Bilal Tariq , Xuedong Hu

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…

Mesoscale and Nanoscale Physics · Physics 2021-05-25 B. Voisin , J. Bocquel , A. Tankasala , M. Usman , J. Salfi , R. Rahman , M. Y. Simmons , L. C. L. Hollenberg , S. Rogge

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

Mesoscale and Nanoscale Physics · Physics 2022-01-25 Donovan Buterakos , Sankar Das Sarma

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite…

Mesoscale and Nanoscale Physics · Physics 2008-04-18 M. J. Calderon , Belita Koiller , S. Das Sarma

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

Mesoscale and Nanoscale Physics · Physics 2021-05-05 F. Borjans , X. Zhang , X. Mi , G. Cheng , N. Yao , C. A. C. Jackson , L. F. Edge , J. R. Petta

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on…

Mesoscale and Nanoscale Physics · Physics 2014-07-09 G. Pica , B. W. Lovett , R. N Bhatt , S. A. Lyon

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…

Mesoscale and Nanoscale Physics · Physics 2012-08-09 A. Baena , A. L. Saraiva , Belita Koiller , M. J. Calderón

Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…

Mesoscale and Nanoscale Physics · Physics 2021-08-11 Benjamin Joecker , Andrew D. Baczewski , John K. Gamble , Jarryd J. Pla , André Saraiva , Andrea Morello

Proposed Silicon-based quantum computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing infrastructure of…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Belita Koiller , Xuedong Hu , S. Das Sarma

We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…

Mesoscale and Nanoscale Physics · Physics 2018-05-02 Léo Bourdet , Yann-Michel Niquet

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…

Phosphorus donor spins in silicon offer a number of promising characteristics for the implementation of robust qubits. Amongst various concepts for scale-up, the shared-control concept takes advantage of 3D scanning tunnelling microscope…

Quantum Physics · Physics 2021-07-27 Charles D. Hill , Muhammad Usman , Lloyd C. L. Hollenberg

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic…

Mesoscale and Nanoscale Physics · Physics 2016-07-27 Péter Boross , Gábor Széchenyi , Dimitrie Culcer , András Pályi

Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of…

Mesoscale and Nanoscale Physics · Physics 2019-10-02 Bilal Tariq , Xuedong Hu

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…

Mesoscale and Nanoscale Physics · Physics 2017-12-11 Neil Zimmerman , Peihao Huang , Dimitrie Culcer

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 S. Das Sarma , Rogerio de Sousa , Xuedong Hu , Belita Koiller

Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite…

Strongly Correlated Electrons · Physics 2015-06-25 Shiue-yuan Shiau , Sucismita Chutia , Robert Joynt

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…

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