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Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory…
The continuing advancement of memory technology has not only fueled a surge in performance, but also substantially exacerbate reliability challenges. Traditional solutions have primarily focused on improving the efficiency of protection…
State-of-the-art techniques for addressing scaling-related main memory errors identify and repair bits that are at risk of error from within the memory controller. Unfortunately, modern main memory chips internally use on-die error…
Increasing single-cell DRAM error rates have pushed DRAM manufacturers to adopt on-die error-correction coding (ECC), which operates entirely within a DRAM chip to improve factory yield. The on-die ECC function and its effects on DRAM…
Inefficient data transfer between computation and memory inspired emerging processing-in-memory (PIM) technologies. Many PIM solutions enable storage and processing using memristors in a crossbar-array structure, with techniques such as…
Chip Guard is a new approach to symbol-correcting error correction codes. It can be scaled to various data burst sizes and reliability levels. A specific version for DDR5 is described. It uses the usual DDR5 configuration of 8 data chips,…
Efficient low complexity error correcting code(ECC) is considered as an effective technique for mitigation of multi-bit upset (MBU) in the configuration memory(CM)of static random access memory (SRAM) based Field Programmable Gate Array…
Memory-centric computing aims to enable computation capability in and near all places where data is generated and stored. As such, it can greatly reduce the large negative performance and energy impact of data access and data movement, by…
This paper investigates hardware-based memory compression designs to increase the memory bandwidth. When lines are compressible, the hardware can store multiple lines in a single memory location, and retrieve all these lines in a single…
Quantum devices can process data in a fundamentally different way than classical computers. To leverage this potential, many algorithms require the aid of a quantum Random Access Memory (QRAM), i.e. a module capable of efficiently loading…
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…
The growing demand for highly reliable communication systems drives the research and development of algorithms that identify and correct errors during data transmission and storage. This need becomes even more critical in hard-to-access or…
Approximate computing (AC) leverages the inherent error resilience and is used in many big-data applications from various domains such as multimedia, computer vision, signal processing, and machine learning to improve systems performance…
Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…
The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…
Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such…
This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…
Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without…
Retrieval-Augmented Generation (RAG) enhances large language models (LLMs) by integrating external knowledge retrieval but faces challenges on edge devices due to high storage, energy, and latency demands. Computing-in-Memory (CIM) offers a…
Spin-Transfer Torque Magnetic RAM} (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major limiting factor for on-chip cache memories. In this paper, we…