Related papers: Quantum anomalous Hall effect in Mn doped HgTe qua…
We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the…
The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states through either sweeping the magnetic field or tuning the carrier density. The recent…
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic…
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of…
We report the first experimental observation of magnetic-field-induced quantized charge accumulation in a quantum anomalous Hall (QAH) system -- a phenomenon originating from the intrinsic two-dimensional surface state and fundamentally…
The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles…
The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and…
The ultra-quantum limit is achieved when a magnetic field confines an electron gas in its lowest spin-polarised Landau level. Here we show that in this limit, electron doped ZrTe$_5$ shows a metal-insulator transition followed by a sign…
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The quantum anomalous Hall (QAH) state is a two-dimensional bulk insulator with a non-zero Chern number in absence of external magnetic fields. Protected gapless chiral edge states enable dissipationless current transport in electronic…
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…
We have studied the fractional and integer quantum Hall (QH) effects in a high-mobility double-layer two-dimensional electron system. We have compared the "stability" of the QH state in balanced and unbalanced double quantum wells. The…
The interplay of electron correlations and topological phases gives rise to various exotic phenomena including fractionalization, excitonic instability, and axionic excitation. Recently-discovered transition-metal pentatellurides can reach…
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…
After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal…
The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states.…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
Using analytical formulas as well as a finite-difference scheme, we investigate the magnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…